Tentative Experiment of Synthesizing Single-Crystal Diamond Films by Chemical Vapor Deposition
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摘要: 采用微波等离子体化学气相沉淀法合成了单晶金刚石膜,探索了化学气相沉淀法(CVD)单晶金刚石膜的生长机理。实验仪器采用石英管式微波等离子体化学气相沉积装置,种晶为3颗IaAB型天然金刚石原石,生长面近平行于(111)和(110)方向,生长温度为800℃,压力约为6 kPa,时间约为8 h。使用宝石显微镜和环境扫描电子显微镜观察分析了CVD单晶金刚石膜的生长表面形貌。结果表明,在生长面上可见明显的生长层,生长晶体无色透明,CVD单晶金刚石膜在生长面上横向外延生长,并形成定向的台阶状表面——“阶梯流”。在相同的条件下,(111)方向上生长的CVD单晶金刚石膜比(110)方向上的更有序。H2浓度的大小对CVD单晶金刚石膜的质量有影响。Abstract: The single-crystal diamond films are grown by the microwave plasma chemical vapor deposition method,as well as the growth mechanism is studied.The experiments are performed in a quartz chamber microwave plasma chemical vapor deposition reactor.Three natural IaAB-type diamond substrates are nearly parallel to(111)-and(110)-oriented.The growth temperature is 800℃,the pressure is about 6 kPa and the growth time is about 8 hours.The surface morphologies of CVD single-crystal diamond films are observed and analysed by microscope and ESEM,which show the lateral growth forming the step-bunched surface——"step-flow".The CVD single-crystal diamond films are colourless and transparent.Under the same condition,CVD single-crystal diamond films grown on(111) direction show more orderly than that on(110).Moreover,the hydrogen concentration could influence the quality of CVD single-crystal diamond films.
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