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Volume 2 Issue 4
Dec.  2000
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Xiao Zhisong, Xu Fei, Xie Datao, Cheng Guoan, Zhang Tonghe. APPLICATION OF ION IMPLANTATION TO SAPPHIRE COLOURATION BY MEVVA SOURCE[J]. Journal of Gems & Gemmology, 2000, 2(4): 42-46.
Citation: Xiao Zhisong, Xu Fei, Xie Datao, Cheng Guoan, Zhang Tonghe. APPLICATION OF ION IMPLANTATION TO SAPPHIRE COLOURATION BY MEVVA SOURCE[J]. Journal of Gems & Gemmology, 2000, 2(4): 42-46.
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APPLICATION OF ION IMPLANTATION TO SAPPHIRE COLOURATION BY MEVVA SOURCE

  • 1. Key Laboratory in University for Radiation Beam Technology and Materials Modification, Beijing Normal University, Beijing, 100875, China;

  • 2. Department of Materials Science and Engineering, Nanchang University, Nanchang, 330047, China;

  • 3. Dep artment of Chemistry, Peking University, Beij ing, 100871, China

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  • Received Date: July 03, 2000
    Graphical Abstract
    • Abstract
  • Colourless synthetic sapphires are implanted with various metal ions (Fe, Co, Cr, Ti, Nd) by use of MEVVA ion source. Colouration of metal-dopped sapphires is investigated by varying the conditions of ion implantation and thermal annealing. The phases of metal-dopped layers in synthetic sapphires are determined by X-ray diffractometer (XRD). Rutherford Backscattering Spectroscopy (RBS) has been used to analyze the distribution of metal-dopped layers. The absorption of metal-dopped sapphires in visible range is studied by means of UV-VIS spectrometer.
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    • References (8)
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