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Volume 11 Issue 2
Jun.  2009
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LI Xiao, TAO Long-feng, CHEN Mei-hua, WANG Li-sheng. Tentative Experiment of Synthesizing Single-Crystal Diamond Films by Chemical Vapor Deposition[J]. Journal of Gems & Gemmology, 2009, 11(2): 11-14.
Citation: LI Xiao, TAO Long-feng, CHEN Mei-hua, WANG Li-sheng. Tentative Experiment of Synthesizing Single-Crystal Diamond Films by Chemical Vapor Deposition[J]. Journal of Gems & Gemmology, 2009, 11(2): 11-14.
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Tentative Experiment of Synthesizing Single-Crystal Diamond Films by Chemical Vapor Deposition

  • 1. Gemmological Institute, China University of Geosciences, Wuhan 430074, China;

  • 2. College of Gemmological and Material Technics, Shijiazhuang University of Economics, Shijiazhuang 050031, China

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  • Received Date: January 08, 2009
  • Revised Date: April 16, 2009
    Graphical Abstract
    • Abstract
  • The single-crystal diamond films are grown by the microwave plasma chemical vapor deposition method,as well as the growth mechanism is studied.The experiments are performed in a quartz chamber microwave plasma chemical vapor deposition reactor.Three natural IaAB-type diamond substrates are nearly parallel to(111)-and(110)-oriented.The growth temperature is 800℃,the pressure is about 6 kPa and the growth time is about 8 hours.The surface morphologies of CVD single-crystal diamond films are observed and analysed by microscope and ESEM,which show the lateral growth forming the step-bunched surface——"step-flow".The CVD single-crystal diamond films are colourless and transparent.Under the same condition,CVD single-crystal diamond films grown on(111) direction show more orderly than that on(110).Moreover,the hydrogen concentration could influence the quality of CVD single-crystal diamond films.
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    • References (10)
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