Epitaxial CVD Diamond Growth on Different Substrates
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摘要: 利用自制的5kW微波等离子体化学气相沉积(MPCVD)装置对在不同衬底材料上外延生长的CVD金刚石进行了研究。利用HPHT金刚石、CVD异质形核生长的金刚石及Ia型天然金刚石样品作为籽晶,分析了不同CH4浓度与基片温度对外延CVD金刚石的影响以及通过扫描电子显微镜表征了CVD金刚石外延面的表面形貌。结果发现,HPHT金刚石为籽晶,由于其自身缺陷导致外延效果不佳;CVD异质形核生长的衬底因形核阶段的晶面生长难以控制而使其外延面较粗糙;经打磨的Ia型天然金刚石才是理想的籽晶。当CH4浓度约为10%、基片温度为1020℃时,CVD金刚石的外延生长速率可达到70.0μm/h。Abstract: The epitaxial CVD diamond growth on different substrates by home-made microwave plasma CVD reactor with 5 kW are mainly studied in the paper. The HPHT diamond,CVD hetero-epitaxial diamond and natural type Ia diamond samples are used as the substrates. The relationship with growth conditions such as the different concentration of CH4 and substrate temperature are analysed,and the surface morphology of the grown CVD diamond is also characterized by the scanning electron microscopy(SEM). The results show that the surface of epitaxial CVD diamond is not smooth due to the defects of HPHT diamond seed. The textured surface is also found that it is difficult to control the growth of the stage of nucleation density by using CVD hetero-epitaxial diamond seed. The natural type Ia diamond could be as an ideal seed for CVD diamond growth with the smooth and perfect surface. The rate of epitaxial CVD diamond growth is about 70.0 μm/h when the concentration of CH4 is about 10% and the substrate temperature is 1 020℃.
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Keywords:
- gem-grade diamond /
- microwave plasma /
- chemical vapor deposition /
- epitaxial /
- seed
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